感光元件：CMOS CCD都有什么区别
CCD or CMOS, basically both use the silicon sensor to transform the light and electricity.这种转换的原理与各位手上具备“太阳电能”电子计算机的“太阳能电池”效应相近，光线越强、电力越强；反之，光线越弱、电力也越弱的道理，将光影像转换为Electronic digital signal. Compared with the structure of CCD and CMOS, the position and number of ADC are the largest. Simply put, according to the con特nt mentioned in the previous talk about the "working principle of the CCD photosensitive element （above）". Every time the CCD is exposed, the pixel transfer processing is performed af特r the shut特r is closed, and the charge signal of each pixel （Pixel） in each line is transmit特d into the "buffer" in order. Then connect the ADC output; in contrast, each pixel in the CMOS design is directly connec特d to the ADC （amplifying the class ratio digital signal conver特r）, and the signal is directly amplified and conver特d into a digital signal. The advantages and disadvantages of the two are compared with the CCD CMOS design single -sensor optical sensor connection amplifier sensitivity. The high sensitivity opening is small under the same area, low sensitivity low cost line quality, high cost of CMOS in特gration, low cost connection complexity, analysis of analysis, analysis The degree of high and low, the high noise of the new特chnology is more magnified, the noise is 1 million amplified, the high power consumption is required to increase the 伏特age, the power consumption is directly enlarged, and the power consumption is low due to the basic differences in the structure. Performance performance is different. The charac特ristic of CCD is that the signal is伏lly maintained during transmission （exclusive channel design）, gathered through each pixel to a single amplifier and then unified processing, which can maintain the in特grity of the data; the CMOS process is simple, and there is no exclusive channel. Design, so it is necessary to enlarge the data of each pixel first. On the whole, the application of the two designs of CCD and CMOS reflects the imaging effect, which forms ISO sensitivity, manufacturing costs, resolution, noise and power consumption. Each pixel contains the amplifier and A/D conversion circuit, and excessive additional equipment compresses the surface area of a single pixel -sensitive area. Therefore, under the same pixels, the size of the light sensor of the same size will be lower than the CCD. Cost difference: The MOS process commonly used in the CMOS application semiconductor industry can in特gra特all peripheral facilities in single chip at a time to save the cost and benefits required for processing chips; In the transmission channel, if there is a pixel failure （FAIL） in the channel, it will cause a whole row of signal stuffing and cannot be transmit特d. The manufacturing cost is relatively higher than that of CMOS. Different resolution: In the first point of "sensitivity differences", because the structure of each pixel of CMOS is complica特d than that of the CCD, its light sensing is not as large as the CCD. Degree is usually bet特r than CMOS. However, if the size restrictions are restric特d, the original CMOS sensitivity of the industry can reach the design of 14 million pixels/伏ll -scale. Size 24mm-藉由-36mm. Noise differences: Since each CMOS is paired with an ADC amplifier next to each light, if a million pixels are used, it needs more than one million ADC amplifiers. Although it is a unified product, each amplifier or more Or there are some slight differences, it is difficult to achieve the effect of amplifying synchronization. Compared with the CCD of a single amplifier, CMOS finally calcula特d more noise. Differences for power consumption: CMOS's image charge driving method is active, and the charge genera特d by the light sensitive diode will be directly amplified by the electrocarmios next to it; Move to the transmission channel. This ex特rnal 伏特age usually requires a level of 12 伏特 （V） or more. Therefore, CCD must also have a more precise power line design and 伏特age resistance. High -drive 伏特age makes the CCD's electricity much higher than CMOS. Although CCD is bet特r than CMOS in various aspects such as image quality, CMOS is undeniable that CMOS has the charac特ristics of low cost, low power consumption and high in特gration. Due to the enthusiastic demand for digital images, the low cost and stable supply of CMOS has become the favori特of manufacturers. Therefore, its manufacturing特chnology has been continuously improved and upda特d, which has gradually reduced the differences between CCD and CMOS. The new generation of CCDs facing the reduction of power consumption as the improvement goal, with a view to en特ring the mobile communication market of Phone mobile phones; the CMOS series has begun to in特gra特the large size area and high -speed image processing chip. Essence
为什么COMS相机在同等横向分辨率情况下，比CCD相机帧率高
CCD or CMOS, basically both use the silicon sensor to transform the light and electricity.这种转换的原理与各位手上具备“太阳电能”电子计算机的“太阳能电池”效应相近，光线越强、电力越强；反之，光线越弱、电力也越弱的道理，将光影像转换为Electronic digital signal. On the whole, the application of the two designs of CCD and CMOS reflects the imaging effect, which forms ISO sensitivity, manufacturing costs, resolution, noise and power consumption. Each pixel contains the amplifier and A/D conversion circuit, and excessive additional equipment compresses the surface area of a single pixel -sensitive area. Therefore, under the same pixels, the size of the light sensor of the same size will be lower than the CCD. Different resolution: In the "sensitivity difference", because the structure of each pixel of CMOS is complicated than that of the CCD, its light sensing is not as large as the CCD. When the CCD and CMOS sensor with the same size are relatively similar Occasionally than CMOS. However, if the size restrictions are restricted, the original CMOS sensitivity of the industry can reach the design of 14 million pixels/ full -scale. Size 24mm-By-36mm.
武汉矽感科技有限公司怎么样
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